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Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989). |
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| Date |
05 December 2007 |
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Summary
Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989).
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
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| current | 04:06, 5 December 2007 | | 1,267 × 867 (173 KB) | Sgptch (talk | contribs) | Basic processes inside the growth chambers of a) MOCVD, b) MBE, and c) CBE. W.T. Tsang, “From Chemical Vapor Epitaxy to Chemical Beam Epitaxy”. J. Cryst. Growth. 95, 121 (1989). |
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