Kolmapäev, juuli 29, 2026

Ajalugu, Täna ajaloos

TÄNA AJALOOS, 11. juuni ⟩ Hävitati Trooja linn

Diagram of pentode transistor as described by Lawrence E. Dickens in their patent, with a cross section view and alternative design with interposed layer of SiO₂. Gates are marked G₁, G₂ and G₃.

A pentode transistor is any transistor having five active terminals.

Early pentode transistors

One early pentode transistor was developed in the early 1950s as an improvement over the point-contact transistor.

  • A point-contact transistor having three emitters. It became obsolete in the middle 1950s.

Pentode field-effect transistors having 3 gates, similar to vacuum tube pentodes have also been described[1]

Modern pentode transistors

References

  1. US Patent 4,104,673 August 1,1978[link removed]

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