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| Description |
Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987). |
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Own work |
| Date |
05 December 2007 |
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Summary
Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987).
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| Date/Time | Thumbnail | Dimensions | User | Comment | |
|---|---|---|---|---|---|
| current | 04:07, 5 December 2007 | | 743 × 973 (87 KB) | Sgptch (talk | contribs) | Growth kinetics involved in a) conventional MBE, b) MOCVD, and c) CBE. W.T. Tsang, “CBE of Ga0.47In0.53As/InP quantum wells and heterostructure devices”. J. Cryst. Growth. 81, 261 (1987). |
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